Building the highest performance photonic chips for data centers
Available now
InP Electro-absorption modulated lasers (EMLs)
Introduction
Inpho’s high-speed EMLs support 100Gbps and 200Gbps per lane applications, making them ideally suited for demanding datacenter network and AI workloads. Designed for low drive voltage and reduced power dissipation, they support high-bandwidth modulation with excellent linearity. Available in single-ended or differential configurations to provide improved noise immunity and signal integrity.
Products
100G
EML
200G
EML
200G
differential EML
Specifications
120Gbaud PAM4 Operation
1,4 or 8 O-Band Wavelengths
Supporting DR, FR4, and FR8 Application
>5dB Extinction Ratio
>60GHz Bandwidth (Packaged)
Differential or Single-Ended Operation
High Reliability
Exceeds the Most Stringent Telcordia Rel Test Standards
For additional technical data, pricing, and lead times
Coming soon
Integration of Photonics & high-speed InP transistors
Introduction
Next-generation photonic interconnects require performance, efficiency, and form factors that are not achievable with today’s electronic and photonic building blocks. Inpho’s approach of integrating electronics and photonics on a single chip is enabling new interconnect form factors, unparalleled shoreline I/O bandwidth density, and matchless energy consumption beyond 200Gbps per lane.
Integrated products > 100Ghz
Modulator+ Driver
PIN + TIA
Benefits
Shoreline Density
>2Tbps/mm
Power
<1pJ/bit
Size
10-100x smaller than comparable solutions
